| 摘要 |
The plasma processing system comprises a processing chamber with a processing space therein to contain a substrate. An electrical element is operable to couple electrical energy into the processing space to generate a plasma and is further operable to interrupt the power to the processing space to extinguish the plasma upon completion of the processing. An electrode positioned inside the chamber is electrically coupled to the substrate and to a DC bias power supply which selectively supplies DC power to the electrode to bias the substrate. A DC bias control circuit coupled to the power supply selectively controls the biasing of the substrate and is operable to briefly supply DC power to the electrode and the substrate proximate the time when the power to the generated plasma is interrupted to momentarily DC bias the substrate such that, as the plasma is extinguished, charged contaminants particles suspended within the plasma are repelled away from the biased substrate to prevent contamination of the substrate.
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