发明名称 |
Monolithic integrated circuit device having microwave power amplifier including a matching circuit using distributed lines |
摘要 |
A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.
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申请公布号 |
US5574402(A) |
申请公布日期 |
1996.11.12 |
申请号 |
US19950524188 |
申请日期 |
1995.09.06 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKAJIMA, AKISHIGE;FUJIOKA, TOORU;HASE, EIICHI |
分类号 |
H01L25/16;H03F3/193;H03F3/60;(IPC1-7):H03F3/193;H03F3/195 |
主分类号 |
H01L25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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