Low-inductance power semiconductor module

摘要

In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contact laminates (4) run parallel to the heat sink (3). A very low-inductance structure is obtained thereby.