PRODUCTION OF PHASE SHIFT MASK AND PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: To provide a technique capable of suppressing the design required for production of a phase shift mask and increase in production time. CONSTITUTION: A unit cell for hole is formed by constituting one actual opening and auxiliary opening groups disposed in proximity to the peripheral four sides thereof as a unit cell. The first unit cells 26c1 to 26c3 for hole arranged at a first pitch in the same orientation and the second unit cells 27c1 to 273 for hole arranged at a second pitch narrower than the first pitch in the same orientation are laid out on first layout data. Thereby, the data of the hole opening groups consisting of the actual openings and auxiliary opening groups of the first phase shift mask used at the time of forming the hole pattern groups on the resist film formed on a semiconductor substrate are formed.