| 摘要 |
<p>PURPOSE: To provide an atmospheric pressure CVD device, wherein a suscepter can be cleaned without stopping the operation of the CVD device, a suscepter moving means is not etched when the suscepter is cleaned by etching, and a damaged suscepter is easily replaced. CONSTITUTION: A thin film is formed through an atmospheric pressure CVD on the surfaces of semiconductor wafers 10 each located on a suscepter 3 which is transferred on an upper rail 13, and the suscepters 3 where the semiconductor wafers 10 are dismounted are made to descend by an unloader suscepter down mechanism 9, transferred along a first lower rail 14 and cleaned at a plasma reaction part 30, made to ascend by a loader suscepter up mechanism 8, mounted with semiconductor wafers again, and transferred on the upper rail 13.</p> |
