| 摘要 |
PURPOSE: To obtain a high sensitivity, high response bolometer type infrared sensor having a low thermal capacity in which the resistor constituting a light receiving part has a large surface area. CONSTITUTION: In the infrared sensor, a thin film light receiving part 15 comprising a semiconductor diode having n-type and p-type semiconductor regions 16, 17 is disposed while being spaced apart specifically from the surface of a board. The n-type and p-type semiconductor regions 16, 17 at the thin film light receiving part 15 are subjected, at one ends thereof, to ohmic contact through a thin metal film 18. The n-type semiconductor regions 16 is connected, at the other end 16b thereof, with an input terminal 21 while the p-type regions 17 is connected, at the other end 17b thereof, with an output terminal 22 and the heat quantity of infrared rays incident on the thin film light receiving part 15 is detected based on the variation of current flowing from the input terminal 21 to the output terminal 22. The thin film light receiving part 15 is supported while spaced apart from the board through the other ends 16b, 17b of n-type and p-type semiconductor regions 16, 17. |
