| 摘要 |
PURPOSE: To provide a gate drive device for IGBT which prevents arm short- circuiting by constantly monitoring the on/off state of IGBT and is suitable for preventing voltage failure in advance. CONSTITUTION: A gate drive device for turning on or off IGBTs 58 and 59 which are connected in series to a same arm as the switching elements of the main circuit of a power conversion circuit is provided with a pulse generation means 53 for generating gate pulses and gate drive means 51 and 52 for generating a feedback signal for indicating the on/off of the IGBTs, thus canceling the block of the gate pulse of the other IGBT of the same arm when gate pulses 64 and 65 of one IGBT and the feedback signals 61 and 62 of the same arm are both off. Also, when both or either of the gate pulse of one IGBT of the same arm and the feedback signal are on, the gate pulse of the other IGBT of the same arm is blocked. |
