| 摘要 |
A power semiconductor circuit comprises a gate-turn-off semiconductor component (FCTh1, FCTh2) having an anode, a cathode and a gate, a diode (D1, D2) and a drive circuit which is connected to the gate by a large-area, low-inductance stripline (11) and which generates a current pulse for turning off the semiconductor component. The diode (D1, D2) is arranged in series with the semiconductor component (FCTh1, FCTh2), specifically in such a way that the diode (D1, D2) and semiconductor component (FCTh1, FCTh2) form a quarter-bridge arm. Provided in parallel with the series circuit of the semiconductor component (FCTh1, FCTh2) and diode (D1, D2) is a low-inductance blocking capacitor (C1, C2) for absorbing the reverse recovery voltage peaks of the diode (D1, D2). The diode (D1, D2) and blocking capacitor (C1, C2) are arranged with low inductance and spatially immediately adjacent to the semiconductor component. |
