发明名称 |
Semiconductor voltage sensing device |
摘要 |
The present invention provides a semiconductor device which is excellent in voltage sense characteristic and simple in manufacturing process. P diffusion regions 12 and 13 are selectively formed on a first major surface of an N- substrate 11, an electrode 31 is formed on the P diffusion region, a sense electrode 32 is formed on the P diffusion region 13, and an electrode 33 is formed on a second major surface of the N- substrate. Then, the electrode 31 is set at 0 V, constant current is led to the sense electrode 32, and the electrode 33 is positively biased. Thus, the voltage applied to the electrode 33 is sensed from a potential obtained at the sense electrode 32. A distance between the P diffusion regions 12 and 13 which determines a voltage sense characteristic can be accurately controlled, and a good voltage sense characteristic can be obtained. Moreover, a manufacturing process is relatively simple.
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申请公布号 |
US5574303(A) |
申请公布日期 |
1996.11.12 |
申请号 |
US19940325633 |
申请日期 |
1994.10.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TERASIMA, TOMOHIDE;TABATA, MITUHARU;YOSHIZAWA, MASAO;SATSUMA, KAZUMASA |
分类号 |
H01L21/66;G01R19/00;H01L29/06;H01L29/735;H01L29/739;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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