| 摘要 |
PURPOSE: To provide a manufacturing method of a thin film transistor excellent in uniformity of characteristics and reliability wherein a polycrystalline silicon film is used, and mobility and brightness ratio of carrier are large. CONSTITUTION: An amorphous silicon layer 5a, an amorphous germanium layer 6a, and a gate insulating film 7 are formed in order on a glass substrate 1 on which a source electrode 2 and a drain electrode 3 are formed. By annealing under the irradiation with a laser light 10 or annealing at a temperature higher than or equal to 600 deg.C, the amorphous germanium layer 6a and the amorphous silicon layer 5a are recrystallized, and turned into a polycrystalline germanium layer and a polycrystalline silicon layer.
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