发明名称 |
Method of removing residual charges of an electrostatic chuck used in a layer deposition process |
摘要 |
A method depositing a layer onto a wafer is disclosed. The method has the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma by CVD; exhausting a deposition gas used for depositing the layer from the deposition chamber; introducing a residual charge removing gas into the deposition chamber; and forming a residual charge removing plasma by discharging the gas to remove residual charges of the single-pole electrostatic chuck.
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申请公布号 |
US5573981(A) |
申请公布日期 |
1996.11.12 |
申请号 |
US19940309873 |
申请日期 |
1994.09.20 |
申请人 |
SONY CORPORATION |
发明人 |
SATO, JUNICHI |
分类号 |
C23C16/50;C23C16/44;C23C16/458;C23C16/511;H01L21/205;H01L21/31;H01L21/683;(IPC1-7):H01L21/00;B25B11/00;H05F3/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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