Verbessertes Verfahren zur Neuordnung von kristallinen Strukturen in legierten oder nicht-legierten Halbleitern mittels Laserimpulsen

摘要

A process for the rearrangement of crystalline structures in alloyed or unalloyed semiconductors by means of laser pulses is described, the power of the laser pulses being less than the power at which the material is damaged or the component having the lowest vapour pressure for the amorphous material is volatilised, and said pulses being repeated at such intervals that temperature increases are precluded which initiate the volatilisation of the component having the highest vapour pressure.