| 摘要 |
The invention relates to a ion beam preparation device for electron microscopy which is capable of observing the preparation process with the aid of a scanning electron microscope (3) and hence deliberately operate on the sample (4). The device is fitted with a multi-axis sample bench, at least one ion source (1, 2), a scanning electron microscope (3) with electron detectors (7, 9, 8) to image secondary electrons (SE), back-scatter electrons (RE) and transmitted electrons (TE), an electron source as a discharger for isolating samples and a light microscope (5). The ability to observe the etching process in situ permits precise monitoring of the etching stage, e.g. the degree of thickness reduction of the sample, at high resolution and, with the aid of a control device (19), it is possible automatically to terminate the thinning process to precise instructions. |
