| 摘要 |
The field effect transistor comprises a source, a drain, a gate and a channel which is formed with a graded InxGa1-xAs(x=0.0 - 0.35, or x=0.40 - 0.65). The device has an InGaAs channel formed on the GaAs substrate by AlGaAs barrier or a graded channel formed with III-V family semiconductor such as AlInAs/InGaAs combination on the InP substrate.
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