| 摘要 |
The variable MOS transistor comprises the steps of: forming a basic capacitor(12A) by forming an n+ diffusion layer(12A1), an insulator(12A2) and a polysilicone gate(12A3) in sequence; forming an extending capacitor(12B,12C) on both sides of the basic capacitor(12A); forming a n-MOS(13A,13B) between the basic capacitor(12A) and the extending capacitor(12B,12C) connecting the n+ diffusion layer(12A1,12B1), (12A1,12C1) each other; contacting the polysilicone gates(12A3), (12B3), (12C3) of the capacitors(12A,12B,12C) to the terminal(B) in common; and connecting the n+ diffusion layer(12A1) of the capacitors(12A,12B,12C) to the terminal(A) of the capacitors through an n-MOS(14).
|
