Methode und Anordnung zur Ablagerung einer Siliciumdioxydschicht,申请号DE19906026756T-传众专利搜索

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发明名称	Methode und Anordnung zur Ablagerung einer Siliciumdioxydschicht
摘要
申请公布号	DE69026756(T2)	申请公布日期	1996.11.07
申请号	DE19906026756T	申请日期	1990.06.20
申请人	WATKINS-JOHNSON CO., PALO ALTO, CALIF., US	发明人	MAHAWILI, IMAD, LOS GATOS CALIFORNIA 95032, US
分类号	C23C16/40;C23C16/42;H01L21/316;(IPC1-7):H01L21/316	主分类号	C23C16/40
代理机构		代理人
主权项
地址

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