| 摘要 |
<p>Solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of said layers, said conductors extending in a direction substantially transverse with respect to said layers, wherein the thin film layers are provided by amorphous silicon of the p-type (p-Si), intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by the formula (I): p-Si, (i-Si, n-Si, i-Si, p-Si)x, i-Si, n-Si, where preferably 0≤x≤5, the amorphous silicon is hydrogenated in a concentration in the range of about 1 at.% - about 10 at.% relative to Si, preferably in a concentration of about 1 at.% relative to Si, one of said conductors provides an electrical contact with each of said p-Si layers and the other of said conductors provides an electrical contact with each of said n-Si layers. A certain amount of crystalline silicon of the p-type is provided within a p-Si layer, and a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.</p> |
