| 摘要 |
PURPOSE:To offer a high resistive semiconductor layer buried type semiconductor laser capable of executing a high speed modulation by a method wherein a current block layer includes, at least, a semi-insulating semiconductor layer possessed of a level deep enough to trap electrons and another semi-insulating semiconductor layer possessed of a level deep enough to trap holes. CONSTITUTION:A silicon doped N-type InP layer 18, an active layer 19, a zinc doped P-type InP layer 20, and a contact layer 17 are epitaxially grown in succession on a substrate 11. Then, SiO2 stripe-like masks 2mum in width are formed at an interval of 300mum. Thereafter, the contact layer 17, the P-type InP layer 20, the active layer 19, and the N-type InP layer 18 are etched. Moreover, leaving the SiO2 stripe-like masks as they are, an iron doped high resistive InP layer 12, a titanium doped high resistive InP layer 15 are selectively, epitaxially grown on the recessed part of a mesa stripe so as to make the whole face flat. After the SiO2 strip-like masks are removed, electrodes 10 are formed through a vacuum evaporation method. |
