| 摘要 |
<p>In a flash-EEPROM array (21), the cells in each row are grouped into pairs (A, B) connected to the same diffused source line (47) and to two different diffused bit lines (41a, 41b), and the adjacent pairs of cells are spaced so that, in each row, only one cell is connected to a respective diffused bit line. The array presents global bit lines (40) in the form of metal lines, and each connected to a plurality of diffused local bit lines (41a, 41b), at least one for each sector. For each sector (33) and each global bit line (40), there are provided two diffused local bit lines (41a, 41b) connected to the same respective global bit line by selection transistors (42a, 42b) so that only one local bit line is biased each time. <IMAGE></p> |
