发明名称 |
Semiconductor single crystalline substrate and method for production thereof. |
摘要 |
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface. <IMAGE> |
申请公布号 |
EP0667637(A3) |
申请公布日期 |
1996.11.06 |
申请号 |
EP19950300881 |
申请日期 |
1995.02.13 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
MARUYAMA, TAMOTSU;SATAO, SHIGEYUKI |
分类号 |
H01L21/02;H01L21/20;H01L21/304 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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