PROCESS FOR PRODUCING AN ACCELERATION SENSOR

摘要

PCT No. PCT/DE95/00022 Sec. 371 Date Jul. 17, 1996 Sec. 102(e) Date Jul. 17, 1996 PCT Filed Jan. 10, 1995 PCT Pub. No. WO95/19572 PCT Pub. Date Jul. 20, 1995Manufacturing method for an acceleration sensor on silicon, whereby, following the manufacture of the doped regions required for the electronic function elements, a polysilicon layer is deposited. The polysilicon layer is structured such that a portion of this polysilicon layer forms an electrode (for example, the emitter electrode (9) and the collector electrode (10) of a transistor) and a sensor layer (17) provided as sensor element.