Thin epitaxy RESURF ic containing HV p-ch and n-ch devices with source or drain not tied to grounds potential

摘要

N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and of a source or drain region, respectively, of the high voltage complementary MOS devices. The devices may be configured as source or drain followers without problems.