| 摘要 |
PURPOSE: To provide a gold alloy fine wire for a semiconductor element which is suitable for high density mount by realizing an alloy composition which reduces influence of a span length and reduces loop bending during bonding and wire flow after sealing. CONSTITUTION: A golf alloy fine wire for a semiconductor element contains Si:0.001 to 0.2wt.% and Pt: less than 0.04 to 1.0wt.% and its remaining part consists of gold and its inevitable impurities and a gold alloy fine wire for a semiconductor element contains 0.001 to 0.06wt.% of one kind or two or more kinds or Y, Ca, La, Ce in total in addition to an element of the former fine wire. |
