| 摘要 |
<p>PURPOSE: To form a split gate MFSFET which is so structured as to enable a gate insulating film to be uniformly etched, thus suppressing the occurrence of dispersion. CONSTITUTION: Platinum 2 is formed on a PZT film 3 of ferroelectric body, a patterning operation is carried out for a gate, an oxide film 4 is formed on the whole surface of a substrate to insulate a platinum 5 which is used as a part of a gate insulating film and etched back so as to be left only on the side face of a gate, ion implantation is carried out using a polysilicon 1 and the platinum 2 which serve as a gate electrode and the oxide film 4 formed on the side face of the gate as a mask, whereby source/drain regions, 9 and 10, are formed. By this setup, a gate can be set separate from a stepped part, which is located between a field region of a field oxide film 8 and a transistor forming region and causes a dispersion of a ferroelectric body in thickness, by a large distance.</p> |
