| 摘要 |
PURPOSE: To form a gap for mutually isolating resistor layers with high precision, and stabilize response speed and discharge starting voltage in a serge absorber. CONSTITUTION: Resistor layers 12a, 12b consisting of high resistance material are formed on the surface of a flat chip base 11 by evaporation or spattering. The space of a gap 13 can be set to 5μm or a fine dimension less than 1μm, and the response time up to the start of a discharge can be shortened. Since the space of the gap 13 can be precisely set, a discharge starting voltage is also stabilized with less dispersion. A resistor layers 12a, 12b are formed of a high melting point material and a spattering resisting material, whereby the damage of the resistor layers by the discharge can be prevented, and the resistor layers 12a, 12b are formed of a material mainly consisting of amorphous carbon, whereby the durability to the plasma by inert gas sealed in a glass sealing body 17 is enhanced.
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