MOS TECHNIQUE POWER DEVICE INTEGRATION STRUCTURE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To improve a dynamic characteristic without sacrificing a normal state characteristic by interdigitating elongated stripes, plural source metal fingers which are brought into contact with an elongated source region and conductive gate fingers. SOLUTION: An elongated doped semiconductor stripes 11 of a first conductivity type formed in a semiconductor layer of a second conductivity type is provided. The elongated stripes 11 contain the elongated source regions of the first conductivity type and they are provided with the first conductive annular doped semiconductor regions 8 which are formed in the semiconductor layer, surround the elongated stripes 11 and are merged with the stripes. Furthermore, insulating gate stripes 16 extending on the semiconductor layer between the adjacent elongated stripes 11, conductive gate fingers 4 which extend on the insulating gate stripes 16 and which are electrically connected with the stripes and source metal fingers 7 which are brought into contact with the long stripes 11 and the elongated source regions 15 are provided. Thus, the fingers 7 and 4 are interdigitated.