发明名称 |
Method of etching silicon carbide |
摘要 |
A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.
|
申请公布号 |
US5571374(A) |
申请公布日期 |
1996.11.05 |
申请号 |
US19950538064 |
申请日期 |
1995.10.02 |
申请人 |
MOTOROLA |
发明人 |
THERO, CHRISTINE;NORTON, PATRICIA A. |
分类号 |
C23F4/00;H01L21/04;H01L21/302;H01L21/3065;(IPC1-7):H01L21/00 |
主分类号 |
C23F4/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|