| 摘要 |
PURPOSE: To improve the dimensional accuracy of a pattern in a simple process without increasing the number of photoresist processes and without decreasing the sensitivity of a resist. CONSTITUTION: The production of pattern includes a process to prepare the compsn. for antireflection film containing a poly(vinylpyrolidone) resin, fluorine- based water-soluble surfactant and water-soluble fluorine compd., a process to form a resist film 2 on a substrate 1, a process to expose the resist film 2 for a specified pattern, and a process to develop the resist 2 after exposure. This method includes a process to form an antireflection film 3 by using the antireflection film compsn. on the resist film 2 before exposure. |
