| 摘要 |
PURPOSE: To produce a fine gold alloy wire for semiconductor device, suitable for high density packaging, by reducing the length of span and reducing the deformation of wire in the case of resin sealing as well as the warpage of loop in the case of bonding. CONSTITUTION: This fine gold alloy wire for semiconductor device has a composition consisting of, by weight, 10-60ppm Ca, 5-70ppm, in total, of either or both of Y and Sc, 6-80ppm, in total, of either or both of La and Ce, 6-100ppm In, and the balance gold with inevitable impurities. Further, this fine gold alloy wire can contain, if necessary, 5-100ppm, in total, of one or >=2 elements among Al, Cu, Pt, and Pd and/or 5-50ppm, in total, of either or both of Si and Ge. |
