HIGH BREAKDOWN STRENGTH SEMICONDUCTOR DEVICE

摘要

PURPOSE: To expand the safety operational region by preventing the voltage and current density from increasing at the junction end in reverse recovery time. CONSTITUTION: A p-type diffused layer 7 is so formed as to surround a p-type emitter layer 4 on the surface of an n-type base layer 1. This p-type diffused layer 7 is so formed as not to come into contact with the p-type emitter layer 4. Next, an electrode 10 integrally formed with the anode electrode 5 through the intermediary of an insulating layer 8 is arranged on an n-type base layer 1 between the p-type diffused layer 7 and the p-type emitter layer 4.