| 摘要 |
PURPOSE: To obtain a method of manufacturing a semiconductor memory device, wherein the semiconductor memory device can be effectively protected against an adverse effect of moisture from a flattening insulating film, and a ground layer where a metal wiring layer is formed is capable of being enhanced in flatness without increasing manufacturing processes in number. CONSTITUTION: A semiconductor memory device is equipped with NMOS transistors 13 and 14, a silicon oxide film 45 (SiH4 /BPSG reflow film) formed as a first flattening insulating film, a TFT 15 formed on the silicon oxide film 45, a silicon oxide film 57 (O3 /TEOS/BPSG reflow film) formed as a second flattening insulating film, and a laminated aluminum wiring 17 formed on the silicon oxide film 57. The first flattening insulating film (silicon oxide film 45) is reduced in thickness to an irreducible minimum, and the second flattening insulating film (silicon oxide film 57) is set larger in thickness than the first flattening insulating film so as to make the best use of the flattening properties of the second flattening insulating film. |
