发明名称 |
Diffraction mask for the fabrication of semiconductor devices |
摘要 |
A dummy mask used in the fabrication of semiconductor devices, capable of forming an ultra-fine pattern by diffracting incident light while controlling or cutting off light components vertically incident on a mask formed with a pattern, thereby increasing the depth of focus and improving the resolution. The dummy mask includes a transparent substrate provided at its upper surface with a diffracting pattern for primarily diffracting light from a light source incident on the dummy mask and at its lower surface with a controlling pattern for removing vertically incident light not diffracted by the diffraction patterns.
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申请公布号 |
US5571641(A) |
申请公布日期 |
1996.11.05 |
申请号 |
US19940266173 |
申请日期 |
1994.06.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
BAE, SANG M. |
分类号 |
G03F1/08;G03F1/14;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03F9/00;G03B27/42;G02B27/44;G02B27/46 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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