发明名称 Diffraction mask for the fabrication of semiconductor devices
摘要 A dummy mask used in the fabrication of semiconductor devices, capable of forming an ultra-fine pattern by diffracting incident light while controlling or cutting off light components vertically incident on a mask formed with a pattern, thereby increasing the depth of focus and improving the resolution. The dummy mask includes a transparent substrate provided at its upper surface with a diffracting pattern for primarily diffracting light from a light source incident on the dummy mask and at its lower surface with a controlling pattern for removing vertically incident light not diffracted by the diffraction patterns.
申请公布号 US5571641(A) 申请公布日期 1996.11.05
申请号 US19940266173 申请日期 1994.06.27
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 BAE, SANG M.
分类号 G03F1/08;G03F1/14;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03F9/00;G03B27/42;G02B27/44;G02B27/46 主分类号 G03F1/08
代理机构 代理人
主权项
地址