发明名称 THIN FILM ELEMENT
摘要 PURPOSE: To obtain a field-effect three-terminal thin film element, which has a large field effect, is superior in modulation characteristics and is provided with a superconducting channel, by a method wherein the superconductive transition temperature of the channel is made higher than the Kosterlitz-Thouless transition temperature of the channel. CONSTITUTION: A region covered with a dielectric film 5 on a superconducting thin film 2 plays the role of a superconducting channel. Speaking on material, the respective materials for a substrate 1, the thin film 2, source and drain electrodes 3 and 4, the film 5 and a gate electrode 6 are an STO film, a YBCO film, a gold film, an STO film and a platinum film. The thin film 2 is formed 100Åthick. The thin film 2 is formed in such a way as to perform a C-axis orientation on the substrate 1. Accordingly, a channel current is made to flow in parallel to a superconducting plane consisting of a CuO film of the YBCO film. In particular, by making higher the superconductive transition temperature of the channel than the Kosterlitz-Thouless transition temperature of the channel, a field-effect three-terminal thin film element, which has a large field effect and is superior in modulation characteristics, can be obtained.
申请公布号 JPH08293629(A) 申请公布日期 1996.11.05
申请号 JP19950095709 申请日期 1995.04.20
申请人 SEIKO EPSON CORP 发明人 KAMIKAWA TAKETOMI;NATORI EIJI;IWASHITA SETSUYA;SHIMODA TATSUYA
分类号 H01L39/22;(IPC1-7):H01L39/22 主分类号 H01L39/22
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