发明名称 Monocrystalline semiconductor commutator with grain boundry
摘要 A semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type, wherein there is provided a grain boundary which is located near a junction surface of the semiconductor region of the first conductivity type and the semiconductor region of the second conductivity type so as not to cross said junction surface.
申请公布号 US5572044(A) 申请公布日期 1996.11.05
申请号 US19950471161 申请日期 1995.06.06
申请人 CANON KABUSHIKI KAISHA 发明人 KOIZUMI, TORU;MIZUTANI, HIDEMASA
分类号 H01L21/20;H01L29/04;H01L29/06;H01L29/32;H01L29/861;(IPC1-7):H01L29/04;H01L31/036 主分类号 H01L21/20
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