| 摘要 |
PURPOSE: To decrease kinds of FETs in a circuit constitution having writing power source voltage exceeding breakdown strength by constituting a writing load with conductive FETs being complementary to FET outputting cell writing voltage. CONSTITUTION: Writing circuits 125, 126,... control connection of writing loads 104,... for bit lines 111, 112,... specified by output 115, 116,... of a column decoder 117 in accordance with a signal of a writing data line 114. A bias circuit 118 outputs bias voltage of 8V to a bias voltage line 103 by step-down of writing power source voltage 101 of 10V, and sets cell writing voltage to 6V. A N type transistor 102 receives a signal of the bias voltage line 103 in a gate electrode, and outputs cell writing voltage to a cell writing voltage line 105 connected to a source electrode. The writing load 104 is constituted with P type transistors being complementary to the N type transistor 102. Any voltage between electrodes of the N type transistor 102 does not exceed 6V. |
