| 摘要 |
<p>PURPOSE: To provide a method of vacuum processing and a device that prevent the lowering of throughput ever at an abnormality as the shut down of a power supply by the interruption of the power supply or by malfunction. CONSTITUTION: A switch 15 is provided between an electrostatic holding electrode 12 and a DC power supply 13 and the electrostatic suction electrode 12 is grounded through a resistor 18 that is connected to a terminal 17 by the switch 15 in a state that plasma 6 is generated. At the abnormality, the switch 15 is operated so that the electrostatic suction electrode 12 is shut off from the DC power supply 13 by connecting the switch 15 to a terminal 19. A He gas exhausting hole 29 that connects between the back surface of a wafer 1 and a processing chamber 27, a lid 31 with an O ring that releases the hole 29 during the power supply is cut off and a cooling gas introducing piping 23 through a valve 33 that releases an exhaust duct 32 for the He gas 29 are arranged on a lower electrode 7 on the side of the processing chamber. At the abnormality, the lid and the valve are opened, and the remaining He gas on the back surface of the wafer and in the cooling gas introducing piping 23 is exhausted into the processing chamber by the differential pressure.</p> |
