| 发明名称 |
Contacts for semiconductor devices |
| 摘要 |
<p>A method for fabrication of metal to semiconductor contacts results in sloped sidewalls in contact regions. An oxide layer is deposited and etched back to form sidewall spacers. A glass layer is then deposited and heated to reflow. After reflow, an etch back of the glass layer results is sloped sidewalls at contact openings and over steps.</p> |
| 申请公布号 |
EP0388075(B1) |
申请公布日期 |
1996.11.06 |
| 申请号 |
EP19900302447 |
申请日期 |
1990.03.07 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
LIOU, FU-TAI;HAN, YU-PIN |
| 分类号 |
H01L21/302;H01L21/033;H01L21/3065;H01L21/3105;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/78;(IPC1-7):H01L21/311;H01L21/60 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
