| 摘要 |
PURPOSE: To provide a ferroelectric thin film capacitor, wherein a lower electrode has a high oxidation resistance, and voids are restrained from being formed in the lower electrode in a process where a dielectric body is crystallized. CONSTITUTION: A ferroelectric thin film capacitor is equipped with a lower electrode 8, a ferroelectric thin film 9 crystallized on the lower electrode 8, and an upper electrode 10 formed on the ferroelectric thin film 9, wherein the lower electrode 8 is formed of platinum alloy thin film which is composed mainly of platinum and other metal elements not included in a platinum group. |
