| 摘要 |
PROBLEM TO BE SOLVED: To provide a photographic plotting process and a mask to adjust a line width of a photoresist pattern. SOLUTION: A controversial point that a line width of a photoresist pattern be different from the desired size by a change in a recess-projection by a position on a semiconductor base board and nonuniformity of a lens used to expose a photoresist or the like, can be solved by exposing the photoresist by adjusting illuminance by respective positions where a line width of the photoresist pattern changes by using a characteristic by which a line width of the photoresist pattern changes when illuminance is changed, and exposable illuminance can be easily adjusted by using it by adding a transmissivity adjusting film pattern to a light transmissive area of a part whose illuminance is adjusted, particularly by a mask to be used to form the pattern. |
