发明名称 |
Method of forming a back end capacitor with high unit capacitance |
摘要 |
This invention provides a structure and a method of forming a capacitor with a high unit capacitance for use in analog circuits and a bond pad which will eliminate bond pad peeling during subsequent processing. The bottom capacitor plate is formed at the same time the bond pads are formed. The bottom capacitor plate and the bond pads are formed using a conducting material such as doped polysilicon, which will eliminate bond pad peeling during subsequent processing. The top capacitor plate is formed when the top electrode pattern is formed. This integrated process provides a bond pad which will eliminate bond pad peeling during subsequent process steps and a capacitor with high unit capacitance for use in analog circuits.
|
申请公布号 |
US5571746(A) |
申请公布日期 |
1996.11.05 |
申请号 |
US19950545413 |
申请日期 |
1995.10.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD. |
发明人 |
PAN, YANG |
分类号 |
H01L23/64;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L23/64 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|