| 摘要 |
In a method for producing a compound semiconductor device such as laser diodes, FET and HEMT, compound semiconductor is grown at a substrate temperature not greater than 500 DEG C. to form a semiconductor layer on a substrate of the semiconductor device. Then, an appropriate treatment, such as heat-treatment in reducing atmosphere, current flow treatment and hydrogen plasma treatment, is conducted to reduce crystal defects in the semiconductor layer attributable to the crystal growth at the low substrate temperature not greater than 500 DEG C.
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