| 摘要 |
In a method for manufacturing a semiconductor device, after a contact holes are formed to pass through an insulator film, a titanium film and a titanium nitride film are deposited on the whole surface including an inner surface of the contact holes. Thereafter, a contact ion implantation is performed to selectively implant impurity ions to the bottom of the contact hole by using a patterned photoresist as a mask, so that an impurity-implanted region is formed at a substrate surface at a bottom of the contact hole.
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