Quantum device and method of making such a device

摘要

A quantum confined device is provided having raised portions formed on opposing walls of a groove, thereby defining a region of reduced width in the vicinity of the intersection of the walls. During fabrication, a "V" groove is formed in a substrate and then further masking and etching steps are performed on the walls of the groove to form the raised portions. Quantum confined devices can be formed within the groove by epitaxial deposition of semiconducting layers into the region of reduced width.