| 摘要 |
PURPOSE: To obtain a semiconductor earthing device in which the impedance to high frequency components is increased by connecting at least a pair of series circuit of a semiconductor element having short rise time and a coil in parallel while reversing the forward direction of the semiconductor element thereby sustaining the impedance to the fundamental frequency of AC voltage at a low level. CONSTITUTION: Each of diodes D1, D2 comprises a semiconductor element in which specific lattice defect is provided through irradiation with proton at an acceleration voltage of about 10Mev. Rise time in the voltage/current characteristics of the diode is shortened greatly through irradiation with proton. A series circuit of the diode D1 and a coil 3 is connected in parallel with a series circuit of the diode D2 and a coil 4 while reversing the forward direction of the diodes D1, D2. Each of the coils 3, 4 has a predetermined number of turns for providing a predetermined inductance, e.g. 40-160mH. |
