| 摘要 |
PURPOSE: To improve the adhesion of a hard carbon film to a substrate and the film forming rate, at the time of forming a hard carbon film by a plasma chemical vapor deposition method, by using a gaseous mixture constituted of methane and a gas contg. carbon more than methane as a reaction gas. CONSTITUTION: A gaseous mixture of methane CH4 and benzene C6 H4 into a reaction chamber 11 having a gas introducing port 15 and an evacuating means 17, and the pressure is regulated to 0.1Torr. Next, a negative potential of about -1000v is applied to an electrode 19 mounted with a sample 21 to generate plasma in the vicinity of the electrode 19, by which the gaseous mixture is decomposed into positive ions, neutral electrons and neutral excitation species to form a hard carbon film on the sample 21. At this time, the ratio of the flow rate between methane and (benzene + methane) is regulated to >=60%, by which the hard carbon film almost free from polymer components can be obtd. Furthermore, the load of the potential may be the application by a high frequency potential. |
