Insulated-gate bipolar transistor with reduced latch-up

摘要

An insulated-gate bipolar transistor includes a semiconductor region of a first conductive type; a base layer of a second conductive type diffused from a surface of the semiconductor region; a source layer of the first conductive type diffused in a surface portion of the base layer; an insulated gate buried in a recess dug from the surface of the source layer through the base layer up to the semiconductor region; a collector layer of the second conductive type diffused from a surface of the semiconductor region on an opposite side of the insulated gate with respect to the source layer; an emitter terminal drawn from the base layer and the source layer; a collector terminal drawn from the collector layer; and a gate terminal drawn from the insulated gate.