| 摘要 |
PURPOSE: To obtain a semiconductor laser of specified band having low oscillation threshold value and operating current and excellent in temperature characteristics and long term reliability by composing a quantum well layer of InAs and a barrier layer of InAlGaAs having band gap wavelength within a specified range. CONSTITUTION: The 2μm semiconductor laser comprises an n-type InAlAs clad layer 2 and an n-type InAlGaAs optical confinement layer 3 having composition of 200nm thick/1.4μm wavelength laminated on the upper surface of an n-type InP substrate 1. An In As strained quantum well layer 4 of 2nm thick and an InAlGaAs barrier layer 5 having composition of 10μm thick/1.4μm wavelength and band gap wavelength of 1.3-1.5μm are laminated alternately by two periods thus forming a multiple quantum well active layer. Subsequently, a p-type InAlGaAs optical confinement layer 6 having composition of 200nm thick/1.4μm wavelength, a p-type InAlAs clad layer 7, a p-type InGaAs cap layer 8 and a p-electrode 9 are laminated thereon. Finally, an n-electrode 10 is formed on the lower surface of the n-type InP substrate.
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