| 摘要 |
PURPOSE: To grow an InAs layer to be thick without relaxing its lattice by maintaining its good crystallinity by a method wherein a strained InAs layer is grown at a molecular beam dose having a value in a specific range and under a growth condition in which the growth rate and the growth temperature are set to values in specific ranges. CONSTITUTION: The ratio F(As)/F(In), of the molecular beam dose of As to that of In, which is changed to an In stabilization face from an As stabilization face is designated as R when an InAs layer is grown at a growth temperature of 440 deg.C and at a growth rate of 1μm/n. At this time, the molecular beam dose of As is set in such a way that the F(As)/F(In) is in the range of R and 4R. In addition, a strained InAs layer is grown at a growth rate of 1μm or higher and at a growth temperature in the range of 360 deg.C to 450 deg.C. Thereby, a thick InAs layer without lattice relaxation can be grown while maintaining high crystallinity.
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