| 摘要 |
PURPOSE: To form a semiconductor thin film at high speed while the generation of a polysilane powder is being suppressed by a method wherein the deposition rate of the semiconductor thin film is set at a specific value or higher and plasma generation energy is supplied intermittently for the supply time at a specific value or lower. CONSTITUTION: Low-frequency electric power from a power supply 4, for modulation, which repeats an ON-OFF operation at a constant period in terms of a direct current is overlapped with high-frequency electric power from a high-frequency power supply. Then, the deposition rate of a semiconductor thin film is set at 600Å/min or higher, and plasma generation energy is supplied intermittently for a supply time of 500μsec or lower. In this manner, the plasma generation energy is supplied intermittently for the supply time at the time or lower of the inverse number of [(secondary reaction rate constant of mother gas reacting with activated species other than long-life activated species at inside of plasma) × (number of mother gas molecules)]. Thereby, the thin film can be formed at high speed. |
