ELECTRICAL CONNECTIONS FORMING METHOD, TREATING APPARATUS HAVING A PLURALITY OF CHAMBERS, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a forming method for electrical connections being capable of forming a metallic material layer having stability and reliability without always forming an adherence layer of TiN and the like, thereby making it possible to respond to the fining of openings and others, creating no technical problem when overetching for the adherence layer, and producing with a high productivity. CONSTITUTION: An interlayer film 2 is formed on a first metallic material portion 1, and an opening 3 is formed in the interlayer film 2 on the first metallic material portion 1. Thereafter, a second metallic material 4 is formed on the whole surface, then etchback is performed, and the second metallic material 4 is selectively left only in the opening 3 in this electrical connections forming method, in which after forming the second metallic material 4, the etchback of the second metallic material 4 is performed continuously at the adjacent etchback chamber through a gate valve and a chamber where the second metallic material 2 was formed (or an upper layer wiring is further formed with the third metallic material).